| PART |
Description |
Maker |
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| CY62128ELL-45SXI CY62128ELL-45ZAXI CY62128ELL-45SX |
1-Mbit (128 K x 8) Static RAM
1-Mbit (128 K × 8) Static RAM
|
Cypress Semiconductor
|
| CY7C1011CV33-10BAJXE CY7C1011CV33-10BAJXET |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
| CY62137FV30LL-45ZSXAT CY62137FV30LL-55ZSXE |
Automotive 2-Mbit (128 K 16) Static RAM
|
Cypress
|
| CY62128EV30LL-45ZAXI |
1-Mbit (128 K x 8) Static RAM Automatic power-down when deselected
|
Cypress Semiconductor
|
| CY62128EV30LL-45ZAXI |
1-Mbit (128 K × 8) Static RAM Typical standby current: 1 μA
|
Cypress Semiconductor
|
| CY62158ELL-45ZSXI |
8-Mbit (1 M x 8) Static RAM Automatic power down when deselected
MoBL® 8-Mbit (1M x 8) Static RAM 1M X 8 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY7C1011CV33-10ZSXA |
2-Mbit (128 K × 16) Static RAM 360 mW (max) (Industrial and Automotive-A)
|
Cypress Semiconductor
|
| CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM
8-Mbit (512K x 16) MoBL? Static RAM
8-Mbit (512K x 16) MoBL垄莽 Static RAM
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| SST4117A SST4118A |
1-Mb (128K x 8) Static RAM
1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我（直）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
| CY7C1041CV33-12ZSXE CY7C1041CV3308 CY7C1041CV33-10 |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 10 ns, PDSO44
4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor, Corp.
|
